Semiconductor devices Time-dependent dielectric breakdown (TDDB) test for inter-metal layers

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

30-06-2011

Publisher

British Standards Institution

1 Scope
2 Terms and definitions
3 Test equipment
4 Test samples
5 Procedures
6 Lifetime estimation
7 Lifetime dependence on inter-metal layer area
8 Summary
Annex A (informative) - Engineering supplementation for
lifetime estimation
Bibliography

Specifies a test method, test structure and lifetime estimation method of the time-dependent dielectric breakdown (TDDB) test for inter-metal layers applied in semiconductor devices.

This part of IEC 62374 describes a test method, test structure and lifetime estimation method of the time-dependent dielectric breakdown (TDDB) test for inter-metal layers applied in semiconductor devices.

Committee	EPL/47
DevelopmentNote	Supersedes 07/30171395 DC. (12/2010) Earlier supersedes BS EN 62374 in error by publisher, now has been re-instated. (06/2011)
DocumentType	Standard
Pages	20
PublisherName	British Standards Institution
Status	Current
Supersedes	07/30171395 DC : 0

Standards	Relationship
EN 62374-1:2010/AC:2011	Identical
IEC 62374-1:2010	Identical

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BS EN 62374-1:2010

Semiconductor devices Time-dependent dielectric breakdown (TDDB) test for inter-metal layers

Table of Contents

Abstract

Scope

General Product Information

International Equivalents

Category

Subcategory