BS EN IEC 60749-17:2019
Current
The latest, up-to-date edition.
Semiconductor devices. Mechanical and climatic test methods Neutron irradiation
Hardcopy , PDF
English
15-05-2019
The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation.
| Committee |
EPL/47
|
| DocumentType |
Standard
|
| ISBN |
9780539000627
|
| Pages |
12
|
| ProductNote |
THIS STANDARD ALSO REFERS TO ASTM E 1018
|
| PublisherName |
British Standards Institution
|
| Status |
Current
|
| Supersedes |
The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test. The objectives of the test are as follows: to detect and measure the degradation of critical semiconductor device parameters as a function of neutron fluence, and to determine if specified semiconductor device parameters are within specified limits after exposure to a specified level of neutron fluence (see Clause6).
| Standards | Relationship |
| IEC 60749-17:2019 | Identical |
| EN IEC 60749-17:2019 | Identical |
| DIN EN IEC 60749-17:2019-11 | Equivalent |
| UNE-EN IEC 60749-17:2019 | Equivalent |
| I.S. EN IEC 60749-17:2019 | Equivalent |
Please Login or Create an Account so you can add users to your Multi user PDF Later.
Important note : All end users must be registered with an Account prior to user licenses being assigned.
Users cannot be edited or removed once added to your Multi user PDF.