BS EN IEC 62819:2023
Current
The latest, up-to-date edition.
Live working. Eye, face and head protectors against the effects of electric arc. Performance requirements and test methods
Hardcopy , PDF
English
10-04-2024
| Committee |
PEL/78
|
| DocumentType |
Standard
|
| Pages |
54
|
| PublisherName |
British Standards Institution
|
| Status |
Current
|
This part of IEC 63275-1 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10h).
| Standards | Relationship |
| EN IEC 62819:2023 | Equivalent |
| EN IEC 62819:2023/AC:2024-03 | Identical |
| IEC 62819:2022/COR1:2024 | Identical |
| I.S. EN IEC 62819:2023 | Equivalent |
| UNE-EN IEC 62819:2023 | Equivalent |
| DIN EN IEC 62819:2023-12 | Equivalent |
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