Customer Support: 131 242

  • Shopping Cart
    There are no items in your cart
We noticed you’re not on the correct regional site. Switch to our AMERICAS site for the best experience.
Dismiss alert

CEI EN 62374-1 : 2012

Current

Current

The latest, up-to-date edition.

SEMICONDUCTOR DEVICES - PART 1: TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB) TEST FOR INTER-METAL LAYERS

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

01-01-2012

$108.99
Including GST where applicable

FOREWORD
1 Scope
2 Terms and definitions
3 Test equipment
4 Test samples
5 Procedures
6 Lifetime estimation
7 Lifetime dependence on inter-metal layer area
8 Summary
Annex A (informative) - Engineering supplementation
        for lifetime estimation
Bibliography

Defines a test method, test structure and lifetime estimation method of the time-dependent dielectric breakdown (TDDB) test for inter-metal layers applied in semiconductor devices.

Committee
CT 309
DevelopmentNote
Classificazione CEI 47-90. (06/2012)
DocumentType
Standard
Pages
24
PublisherName
Comitato Elettrotecnico Italiano
Status
Current

Standards Relationship
EN 62374-1:2010/AC:2011 Identical
IEC 62374-1:2010 Identical

$108.99
Including GST where applicable