IEC 60747-9:2007
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
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Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
Hardcopy , PDF 1 User , PDF 3 Users , PDF 5 Users , PDF 9 Users
English - French
26-09-2007
31-12-2021
FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
3.1 Graphical symbol of IGBT
3.2 General terms
3.3 Terms related to ratings and characteristics;
voltages and currents
3.4 Terms related to ratings and characteristics;
other characteristics
4 Letter symbols
4.1 General
4.2 Additional general subscripts
4.3 List of letter symbols
5 Essential ratings and characteristics
5.1 Ratings (limiting values)
5.2 Characteristics
6 Measuring methods
6.1 General
6.2 Verification of ratings (limiting values)
6.3 Methods of measurement
7 Acceptance and reliability
7.1 General requirements
7.2 Specific requirements
7.3 Type tests and routine tests
Annex A (normative) Measuring method for collector-emitter
breakdown voltage
Annex B (normative) Measuring method for inductive load
turn-off current under specified conditions
Annex C (normative) Forward biased safe operating area (FBSOA)
Annex D (normative) Case non-rupture
Bibliography
This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).The major changes with respect to the previous edition are mainly of an editorial nature.
| Committee |
TC 47/SC 47E
|
| DevelopmentNote |
To be read in conjunction with IEC 60747-1 (01/2003) Stability Date: 2017. (10/2012)
|
| DocumentType |
Standard
|
| ISBN |
2-8318-9321-6
|
| Pages |
117
|
| PublisherName |
International Electrotechnical Committee
|
| Status |
Superseded
|
| SupersededBy | |
| Supersedes |
| Standards | Relationship |
| NEN IEC 60747-9 : 2007 | Identical |
| BS IEC 60747-9:2007 | Identical |
| SAC GB/T 29332 : 2012 | Identical |
| BS EN 62747:2014 | Terminology for voltage-sourced converters (VSC) for high-voltage direct current (HVDC) systems |
| CEI EN 60747-15 : 2012 | SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES |
| I.S. EN 62751-1:2014 | POWER LOSSES IN VOLTAGE SOURCED CONVERTER (VSC) VALVES FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS - PART 1: GENERAL REQUIREMENTS |
| NF EN 62751-1 : 2015 | POWER LOSSES IN VOLTAGE SOURCED CONVERTER (VSC) VALVES FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS - PART 1: GENERAL REQUIREMENTS |
| EN 60747-15:2012 | Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices |
| EN 62747:2014/AC:2015 | TERMINOLOGY FOR VOLTAGE-SOURCED CONVERTERS (VSC) FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS (IEC 62747:2014) |
| I.S. EN 62747:2014-2015-10 | TERMINOLOGY FOR VOLTAGE-SOURCED CONVERTERS (VSC) FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS |
| DIN IEC/TR 62543 : 2018 | HIGH-VOLTAGE DIRECT CURRENT (HVDC) POWER TRANSMISSION USING VOLTAGE SOURCED CONVERTERS (VSC) (IEC/TR 62543:2011 + A1:2013 + A2:2017) |
| VDE 0553-543 : 2018 | HIGH-VOLTAGE DIRECT CURRENT (HVDC) POWER TRANSMISSION USING VOLTAGE SOURCED CONVERTERS (VSC) (IEC/TR 62543:2011 + A1:2013 + A2:2017) |
| 01/206102 DC : DRAFT JUL 2001 | IEC 60747-8-12 ED.1 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 8-12: 8-12: METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS POWER SWITCHING APPLICATIONS |
| 07/30162213 DC : 0 | BS EN 60747-15 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES |
| 12/30251416 DC : 0 | BS EN 62747 - TERMINOLOGY FOR VOLTAGE-SOURCED CONVERTERS (VSC) FOR HVDC SYSTEMS |
| I.S. EN 60747-15:2012 | SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES (IEC 60747-15:2010 (EQV)) |
| BS EN 62751-1:2014 | Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems General requirements |
| BS EN 60747-15:2012 | Semiconductor devices. Discrete devices Isolated power semiconductor devices |
| I.S. EN 62751-2:2014 | POWER LOSSES IN VOLTAGE SOURCED CONVERTER (VSC) VALVES FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS - PART 2: MODULAR MULTILEVEL CONVERTERS |
| BS PD IEC TR 62543 : 2011 | HIGH-VOLTAGE DIRECT CURRENT (HVDC) POWER TRANSMISSION USING VOLTAGE SOURCED CONVERTERS (VSC) |
| IEC 60747-8-4:2004 | Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications |
| 12/30253588 DC : 0 | BS EN 62751-2 - DETERMINATION OF POWER LOSSES IN VOLTAGE SOURCED CONVERTER (VSC) VALVES FOR HVDC SYSTEMS - PART 2: MODULAR MULTILEVEL CONVERTERS |
| 04/30114936 DC : DRAFT JUN 2004 | EN 50439 - RAILWAY APPLICATIONS - RELIABILITY TESTS FOR HIGH POWER SEMICONDUCTORS DEVICES - PART 1: STANDARD BASE-PLATE MODULES |
| BS EN 62751-2:2014 | Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems Modular multilevel converters |
| EN 62751-1:2014 | Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems - Part 1: General requirements |
| EN 62751-2:2014 | Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems - Part 2: Modular multilevel converters |
| IEC 62751-2:2014 | Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems - Part 2: Modular multilevel converters |
| 12/30252799 DC : 0 | BS EN 62751-1-1 - DETERMINATION OF POWER LOSSES IN VOLTAGE SOURCED CONVERTERS (VSC) FOR HV DC SYSTEMS - PART 1: GENERAL REQUIREMENTS |
| IEC 62751-1:2014+AMD1:2018 CSV | Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems - Part 1: General requirements |
| IEC TR 62543:2011+AMD1:2013 CSV | High-voltage direct current (HVDC) power transmission using voltage sourced converters (VSC) |
| IEC 60747-15:2010 | Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices |
| IEC 60747-7:2010 | Semiconductor devices - Discrete devices - Part 7: Bipolar transistors |
| IEC 60747-1:2006+AMD1:2010 CSV | Semiconductor devices - Part 1: General |
| IEC 60747-6:2016 | Semiconductor devices - Part 6: Discrete devices - Thyristors |
| IEC 60050-521:2002 | International Electrotechnical Vocabulary (IEV) - Part 521: Semiconductor devices and integrated circuits |
| IEC 60747-2:2016 | Semiconductor devices - Part 2: Discrete devices - Rectifier diodes |
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