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IEC 62418:2010

Current

Current

The latest, up-to-date edition.

Semiconductor devices - Metallization stress void test

Available format(s)

Hardcopy , PDF 1 User , PDF 3 Users , PDF 5 Users , PDF 9 Users

Language(s)

English - French

Published date

22-04-2010

$245.41
Including GST where applicable

FOREWORD
1 Scope
2 Test equipment
3 Test structure
4 Stress temperature
5 Procedure
6 Failure criteria
7 Data interpretation and lifetime extrapolation (resistance
  change method)
8 Items to be specified and reported
Annex A (informative) - Stress migration mechanism
Annex B (informative) - Technology-dependent factors for
                        aluminium
Annex C (informative) - Technology-dependent factors for
                        copper
Annex D (informative) - Precautions
Bibliography

IEC 62418:2010 describes a method of metallization stress void test and associated criteria. It is applicable to aluminium (Al) or copper (Cu) metallization.

Committee
TC 47
DevelopmentNote
Stability Date: 2020. (12/2017)
DocumentType
Standard
Pages
34
PublisherName
International Electrotechnical Committee
Status
Current

Standards Relationship
NF EN 62418 : 2011 Identical
NBN EN 62418 : 2010 Identical
NEN EN IEC 62418 : 2010 Identical
I.S. EN 62418:2010 Identical
PN EN 62418 : 2010 Identical
BS EN 62418:2010 Identical
CEI EN 62418 : 2011 Identical
EN 62418:2010 Identical
DIN EN 62418:2010-12 Identical
UNE-EN 62418:2010 Identical
BS IEC SRD 62913-2-4:2019 Identical

IEC TS 62686-1:2015 Process management for avionics - Electronic components for aerospace, defence and high performance (ADHP) applications - Part 1: General requirements for high reliability integrated circuits and discrete semiconductors
PD IEC/TS 62686-1:2015 Process management for avionics. Electronic components for aerospace, defence and high performance (ADHP) applications General requirements for high reliability integrated circuits and discrete semiconductors

$245.41
Including GST where applicable