JEDEC JESD 78E:2016
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
View Superseded by
IC LATCH-UP TEST
Hardcopy , PDF
English
23-11-2018
25-02-2022
This standard covers the I-test and Vsupply overvoltage latch-up testing of integrated circuits.
| Committee |
JC-14.1
|
| DocumentType |
Revision
|
| Pages |
0
|
| PublisherName |
JEDEC Solid State Technology Association
|
| Status |
Superseded
|
| SupersededBy | |
| Supersedes |
| DSCC 98537 G : 2019 | MICROCIRCUIT, MEMORY, DIGITAL, RADIATIONHARDENED, CMOS/SOI, 128K X 8 STATIC RAM, MONOLITHIC SILICON |
| DSCC 95845K:2020 | MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS/SOI, 32K X 8 STATIC RAM, MONOLITHIC SILICON |
| DSCC 93221 C : 2020 | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 4000 GATES, MONOLITHIC SILICON |
| DSCC 93152 D : 2020 | MICROCIRCUIT, DIGITAL, CMOS, FIFO, MONOLITHIC SILICON |
| DSCC 96877E:2025 | MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS, 128K x 8 STATIC RAM, MONOLITHIC SILICON |
| DSCC 93141C : 2020 | MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 9-BIT LATCHABLE TRANSCEIVER WITH PARITY GENERATOR/CHECKER, NON INVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON |
| DSCC 18212 : 2019 | MICROCIRCUIT, MEMORY, DIGITAL,128K X 8 NONVOLATILE STATIC RAM WITH AUTOMATIC STORE ON POWER LOSS, MONOLITHIC SILICON |
| DSCC 92194 C : 2020 | MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL TRANSPARENT D-TYPE LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON |
| DSCC 15240 : 2019 | MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, 16 BIT BUS SWITCH, MONOLITHIC SILICON<br> |
| DSCC 11237 C : 2019 | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K X 32-BIT (16M) WITH EMBEDDED EDAC, LOW VOLTAGE SRAM, MONOLITHIC SILICON |
| DSCC 93144 D : 2020 | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON |
| MIL-STD-883-1 Base Document:2019 | Environmental Test Methods for Microcircuits Part 1: Test Methods 1000-1999 |
| DSCC 15212C:2025 | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2M x 32-BIT (64M), RADIATION-HARDENED, PIPELINED, SYNCHRONOUS SRAM (SSRAM), MONOLITHIC SILICON |
| DSCC 97642C:2020 | MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE 2-LINE TO 1-LINE DATA SELECTOR/MULTIPLEXER, MONOLITHIC SILICON |
| DSCC 15245 : A | Microcircuit, Digital, Radiation Hardened, High Speed CMOS, 20 Bit Bus Switch, Monolithic Silicon |
| DSCC 18215:2020 | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION HARDENED, 4M X 36-bit, 1.8 VOLT, 2-WORD AND 4-WORD BURST, SYNCHRONOUS STATIC RANDOM ACCESS MEMORY (SSRAM), MONOLITHIC SILICON |
| DSCC 04220 F : 2020 | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 1,000,000 GATES, MONOLITHIC SILICON |
| DSCC 15202C:2022 | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, LOW POWER REPROGRAMMABLE FLASH FIELD PROGRAMMABLE GATE ARRAY, 3,000,000 GATES, MONOLITHIC SILICONE |
| DSCC 16208H:2024 | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, LOW POWER REPROGRAMMABLE 151,824 LOGIC ELEMENT FLASH FIELD PROGRAMMABLE GATE ARRAY WITH DECOUPLING CAPACITORS,MONOLITHIC SILICON |
| DSCC 10206D:2021 | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2MEG X 39-BIT (80M), RADIATION-HARDENED, DUAL VOLTAGE SRAM, MULTICHIP MODULE<br> |
| DSCC 92188D : 2020 | MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON |
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