MIL-M-38510-206 Revision D:2005
Current
The latest, up-to-date edition.
Microcircuit, Digital, 4096 Bit Schottky, Bipolar, Programmable Read-Only Memory (PROM)
25-04-2005
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the requirements for monolithic silicon, programmable read-only memory (PROM) microcircuits which employ thin film nichrome (NiCr) resistors, tungsten (W) or titanium tungsten (TiW) as the fusible link or programming element.
| DevelopmentNote |
Inactive for New Design. (04/2005) D NOTICE 1 - Notice of Validation but remains Inactive for New Design. (02/2010) D NOTICE 2 - Notice of Validation but remains Inactive for New Design. (12/2014)
|
| DocumentType |
Standard
|
| Pages |
44
|
| PublisherName |
US Military Specs/Standards/Handbooks
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| Status |
Current
|
This specification covers the detail requirements for monolithic silicon, programmable read-only memory (PROM) microcircuits which employ thin film nichrome (NiCr) resistors, tungsten (W) or titanium tungsten (TiW) as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. A special test requirement is included in this specification to screen against devices which may contain excess moisture in the package materials or internal atmosphere ( see freeze-out test of 4.2d). For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.4).
| MIL-STD-883 Revision K:2016 | Microcircuits |
| MIL-PRF-38535 Revision K:2013 | Integrated Circuits (Microcircuits) Manufacturing, General Specification for |
| MIL-STD-1835 Revision D:2004 | Electronic Component Case Outlines |
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