Transistor, Field Effect, N-Channel, Silicon, Power, Low-Threshold Logic Level, High Frequency, High Switching Speed, Device Types 2N6660 and 2N6661, Through Hole and Surface Mount Packages, Quality Levels JAN, JANTX, JANTXV,and JANS

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Published date

29-08-2011

Publisher

US Military Specs/Standards/Handbooks

1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES

Describes the performance requirements for a N-channel, enhancement-mode, lowthreshold logic level, high frequency, high switching speed MOSFET, power transistor.

This specification covers the performance requirements for a N-channel, enhancement-mode, low-threshold logic level, high frequency, high switching speed MOSFET, power transistor. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500.

DevelopmentNote	Supersedes MIL S 19500/547. (02/2000) D NOTICE 1 - Notice of Validation. (07/2016)
DocumentType	Standard
Pages	17
PublisherName	US Military Specs/Standards/Handbooks
Status	Current
Supersedes	MIL S 19500/547 : A

MIL-PRF-19500 Revision P:2010	SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
MIL-STD-750 Revision F:2011	TEST METHODS FOR SEMICONDUCTOR DEVICES

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MIL-PRF-19500-547 Revision D:2011

Transistor, Field Effect, N-Channel, Silicon, Power, Low-Threshold Logic Level, High Frequency, High Switching Speed, Device Types 2N6660 and 2N6661, Through Hole and Surface Mount Packages, Quality Levels JAN, JANTX, JANTXV,and JANS

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General Product Information

Standards Referencing This Book

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