NEN ISO 23812 : 2009
Current
Current
The latest, up-to-date edition.
SURFACE CHEMICAL ANALYSIS - SECONDARY-ION MASS SPECTROMETRY - METHOD FOR DEPTH CALIBRATION FOR SILICON USING MULTIPLE DELTA-LAYER REFERENCE MATERIALS
Published date
12-01-2013
Publisher
Defines a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials. Applies to single-crystalline silicon, polycrystalline silicon and amorphous silicon.
Sorry this product is not available in your region.
Access your standards online with a subscription
Features
-
Simple online access to standards, technical information and regulations.
-
Critical updates of standards and customisable alerts and notifications.
-
Multi-user online standards collection: secure, flexible and cost effective.