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PD ISO/TR 16268:2009

Current

Current

The latest, up-to-date edition.

Surface chemical analysis. Proposed procedure for certifying the retained areic dose in a working reference material produced by ion implantation

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

30-11-2009

$531.66
Including GST where applicable

Foreword
Introduction
1 Scope
2 Normative references
3 Terms and definitions
4 Symbols and abbreviated terms
5 Concept and procedure
6 Requirements
7 Certification
Annex A (informative) - Ion implantation
Annex B (informative) - Ion-implantation dosimetry
Annex C (informative) - X-ray fluorescence spectrometry
Annex D (informative) - Non-certified secondary reference
                        materials and substitutes
Annex E (informative) - Uncertainties in measurements of
                        areic dose
Bibliography

Describes a procedure for the certification of the areic dose of an ion-implanted analyte element of atomic number larger than that of silicon retained in a working reference material (WoRM) intended for surface-analytical use.

Committee
CII/60
DocumentType
Standard
Pages
30
PublisherName
British Standards Institution
Status
Current

This Technical Report specifies a procedure for the certification of the areic dose of an ion-implanted analyte element of atomic number larger than that of silicon retained in a working reference material (WoRM) intended for surface-analytical use. The WoRM is in the form of a polished (or similarly smooth-faced) wafer (also referred to as the host), of uniform composition and nominal diameter 50mm or more, that has been ion-implanted with nominally one isotope of a chemical element (also referred to as the analyte), not already present in the host, to a nominal areic dose normally within the range 1016 atoms/cm2 to 1013 atoms/cm2 (i.e. the range of primary interest in semiconductor technology). The areic dose of the ion-implanted analyte retained in the WoRM wafer is certified against the areic dose of the same analyte retained in an ion-implanted silicon wafer having the status of a (preferably certified) secondary reference material (SeRM).

Information is provided on the concept and the procedure for certification of the WoRM. There is also a description of the requirements for the reference materials, the comparative measurements and the actual certification. Supporting information on ion implantation, ion-implantation dosimetry, wavelength-dispersive X-ray fluorescence spectroscopy and non-certified substitutes for unobtainable SeRMs is provided in AnnexesA to D. Sources and magnitudes of uncertainties arising in the certification process are detailed in AnnexE.

Standards Relationship
ISO/TR 16268:2009 Identical

ISO 18115:2001 Surface chemical analysis — Vocabulary
ISO Guide 30:2015 Reference materials — Selected terms and definitions
ISO/IEC Guide 98-3:2008 Uncertainty of measurement — Part 3: Guide to the expression of uncertainty in measurement (GUM:1995)

$531.66
Including GST where applicable