09/30207175 DC : 0

FOREWORD
INTRODUCTION
1 Scope
2 Normative references
3 Terms and definitions
4 Requirements
   4.1 Material specification
   4.2 Wafer specifications
5 Sampling
   5.1 Sampling
   5.2 Sampling frequency
   5.3 Inspection of whole population
6 Test methods
   6.1 Diameter
   6.2 Thickness
   6.3 Dimension of OF
   6.4 Orientation of OF
   6.5 TV5
   6.6 Warp
   6.7 TTV
   6.8 Front surface defects
   6.9 Inclusions
   6.10 Back surface roughness
   6.11 Orientation
   6.12 Curie temperature
   6.13 Lattice constant
7 Identification, labeling, packaging, delivery condition
   7.1 Packaging
   7.2 Labelling and identification
   7.3 Delivery condition
8 Measurement of Curie temperature
   8.1 General
   8.2 DTA method
   8.3 Dielectric constant method
9 Measurement of lattice constant (Bond method)
10 Measurement of face angle by X-ray
   10.1 Measurement principle
   10.2 Measurement method
   10.3 Measuring surface orientation of wafer
   10.4 Measuring OF flat orientation
   10.5 Typical wafer orientations and reference planes
11 Measurement of bulk resistivity
   11.1 Resistance measurement of a wafer
   11.2 Electrode
   11.3 Bulk resistivity
12 Visual inspections

BS EN 62276