ASTM F 996 : 2011 : R2018
Current
The latest, up-to-date edition.
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–Voltage Characteristics (Withdrawn 2023)
Hardcopy , PDF
English
04-10-2018
CONTAINED IN VOL. 10.04, 2018 Defines the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxide-semiconductor-field-effect transistor (MOSFET) and an isolation dielectric in a parasitic MOSFET.
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