ANSI/ESDA/JEDEC JS-001:2024
Current
JOINT JEDEC/ESDA STANDARD FOR ELECTROSTATIC DISCHARGE SENSITIVITY TEST - HUMAN BODY MODEL (HBM) - DEVICE LEVEL
Hardcopy , PDF
English
10-01-2024
This standard establishes the procedure for testing, evaluating, and classifying components and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined human body model (HBM) electrostatic discharge (ESD).
| DocumentType |
Test Method
|
| Pages |
59
|
| PublisherName |
JEDEC Solid State Technology Association
|
| Status |
Current
|
| Supersedes |
| DSCC V62/24612:2024 | 40-V THREE-PHASE BLDC GATE DRIVER, MONOLITHIC SILICON |
| DSCC V62/23623:2025 | MICROCIRCUIT, LINEAR, ENHANCED PRODUCT 2-V TO 5.5 V, LOW NOISE, HEX SCHMITTTRIGGER INVERTERS, MONOLITHIC SILICON |
| DSCC 25205:2025 | MICROCIRCUIT, DIGITAL CMOS, RADIATION HARDENED, 2.5 V QUAD LVDS DRIVER, MONOLITHIC SILICON |
| DSCC V62/25635A:2025 | MICROCIRCUIT, LINEAR BiCMOS (LBCSOI2), RADIATION TOLERANT, 2.7 V TO 80 V, 1.1 MHz, RADIATION TOLERANT, 2.7 V TO 80 V, 1.1 MHz, ULTRA-PRECISE, CURRENT-SENSE AMPLIFIER, MONOLITHIC SILICON |
| DSCC V62/25605:2025 | MICROCIRCUIT, LINEAR BiCMOS, HIGH-SPEED DIFFERENTIAL LINE DRIVER, MONOLITHIC SILICON |
| DSCC V62/23634:2025 | MICROCIRCUIT, LINEAR, USER PROGRAMMABLE POWER MANAGEMENT IC (PMIC) WITH THREE STEPDOWN DC/DC CONVERTERS AND FOUR LOW DROPOUT (LDO) REGULATORS, MONOLITHIC SILICON |
| DSCC V62/24640:2025 | MICROCIRCUIT, BiCMOS, HIGH-PRECISION QUAD COMPARATORS WITH OPEN-DRAIN OR PUSH-PULL OUTPUT, MONOLITHIC SILICON |
| DSCC V62/25615:2025 | MICROCIRCUIT, DIGITAL, ENHANCED PRODUCT, OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS, MONOLITHIC SILICON |
| DSCC V62/24626:2025 | MICROCIRCUIT, BiCMOS, RADIATION-TOLERANT 3V TO 5.5 V RS-485 TRANSCEIVER WITH FLEXIBLE I/O SUPPLY AND IEC ESD PROTECTION , MONOLITHIC SILICON |
| DSCC V62/24635:2025 | MICROCIRCUIT, DIGITAL, 12 BIT ASYNCHRONOUS BINARY COUNTER, MONOLITHIC SILICON |
| DSCC V62/25656:2025 | MICROCIRCUIT, LINEAR, BiCMOS, NEAR-DC TO >14GHz, SINGLE-ENDED-TO-DIFFERENTIAL RF AMPLIFIER, MONOLITHIC SILICON |
| DSCC 24201B:2026-03 | MICROCIRCUIT, LINEAR, BiCMOS, RADIATION HARDENED, CURRENT MODE PWM CONTROLLER WITH INTEGRATED GATE DRIVER, MONOLITHIC SILICON |
| JEDEC JESD 99C:2012 | Terms, Definitions, and Letter Symbols for Microelectronic Devices |
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