BS IEC 60747-9:2007
Superseded
View Superseded by
Semiconductor devices. Discrete devices Insulated-gate bipolar transistors (IGBTs)
Hardcopy , PDF
English
11-30-2007
11-22-2019
1 Scope
2 Normative references
3 Terms and definitions
3.1 Graphical symbol of IGBT
3.2 General terms
3.3 Terms related to ratings and characteristics;
voltages and currents
3.4 Terms related to ratings and characteristics;
other characteristics
4 Letter symbols
4.1 General
4.2 Additional general subscripts
4.3 List of letter symbols
5 Essential ratings and characteristics
5.1 Ratings (limiting values)
5.2 Characteristics
6 Measuring methods
6.1 General
6.2 Verification of ratings (limiting values)
6.3 Methods of measurement
7 Acceptance and reliability
7.1 General requirements
7.2 Specific requirements
7.3 Type tests and routine tests
Annex A (normative) Measuring method for collector-emitter
breakdown voltage
Annex B (normative) Measuring method for inductive load
turn-off current under specified conditions
Annex C (normative) Forward biased safe operating area (FBSOA)
Annex D (normative) Case non-rupture
Bibliography
Provides product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
| Committee |
EPL/47
|
| DevelopmentNote |
Supersedes 93/200600 DC. (01/2003) Supersedes 98/231398 DC. (05/2005) Supersedes 04/30113287 DC. (11/2007)
|
| DocumentType |
Standard
|
| Pages |
60
|
| PublisherName |
British Standards Institution
|
| Status |
Superseded
|
| SupersededBy | |
| Supersedes |
This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). The major changes with respect to the previous edition are mainly of an editorial nature.
| Standards | Relationship |
| IEC 60747-9:2007 | Identical |
| IEC 60747-7:2010 | Semiconductor devices - Discrete devices - Part 7: Bipolar transistors |
| IEC 60747-1:2006+AMD1:2010 CSV | Semiconductor devices - Part 1: General |
| IEC 60747-6:2016 | Semiconductor devices - Part 6: Discrete devices - Thyristors |
| IEC 60050-521:2002 | International Electrotechnical Vocabulary (IEV) - Part 521: Semiconductor devices and integrated circuits |
| IEC 60747-2:2016 | Semiconductor devices - Part 2: Discrete devices - Rectifier diodes |
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