CEI EN 62374-1 : 2012
Current
SEMICONDUCTOR DEVICES - PART 1: TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB) TEST FOR INTER-METAL LAYERS
Hardcopy , PDF
English
01-01-2012
FOREWORD
1 Scope
2 Terms and definitions
3 Test equipment
4 Test samples
5 Procedures
6 Lifetime estimation
7 Lifetime dependence on inter-metal layer area
8 Summary
Annex A (informative) - Engineering supplementation
for lifetime estimation
Bibliography
Defines a test method, test structure and lifetime estimation method of the time-dependent dielectric breakdown (TDDB) test for inter-metal layers applied in semiconductor devices.
| Committee |
CT 309
|
| DevelopmentNote |
Classificazione CEI 47-90. (06/2012)
|
| DocumentType |
Standard
|
| Pages |
24
|
| PublisherName |
Comitato Elettrotecnico Italiano
|
| Status |
Current
|
| Standards | Relationship |
| EN 62374-1:2010/AC:2011 | Identical |
| IEC 62374-1:2010 | Identical |
Please Login or Create an Account so you can add users to your Multi user PDF Later.
Important note : All end users must be registered with an Account prior to user licenses being assigned.
Users cannot be edited or removed once added to your Multi user PDF.