DIN 50434:1986-02
Withdrawn
Withdrawn
TESTING OF MATERIALS FOR SEMICONDUCTOR TECHNOLOGY; DETECTION OF CRYSTAL DEFECTS IN MONOCRYSTALLINE SILICON USING ETCHING TECHNIQUES ON (111) AND (100) SURFACES
Available format(s)
Hardcopy , PDF
Language(s)
English
Published date
01-12-2013
Withdrawn date
07-01-2007
Excluding Tax where applicable
The method specified is used to detect crystal defects as described in clause 2 in monocrystalline silicon samples, preferably in slice form, with polished or polish-etched surfaces oriented in the {111} and {100} planes by defect etching. The method is especially suitable for determining the density and distribution of dislocations. It is suitable for n-type and p-type doped silicon with resistivities down to 0,005 omega cm for dislocation densities between 100 and 100000 cm-[2].
| DocumentType |
Standard
|
| Pages |
10
|
| PublisherName |
German Institute for Standardisation (Deutsches Institut für Normung)
|
| Status |
Withdrawn
|
| I.S. EN 50513:2009 | SOLAR WAFERS - DATA SHEET AND PRODUCT INFORMATION FOR CRYSTALLINE SILICON WAFERS FOR SOLAR CELL MANUFACTURING |
| EN 50513:2009 | Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing |
| CEI EN 50513 : 2010 | SOLAR WAFERS - DATA SHEET AND PRODUCT INFORMATION FOR CRYSTALLINE SILICON WAFERS FOR SOLAR CELL MANUFACTURING |
| BS EN 50513:2009 | Solar wafers. Data sheet and product information for crystalline silicon wafers for solar cell manufacturing |
| 08/30176109 DC : DRAFT JAN 2008 | BS EN 50513 - SOLAR WAFERS - DATA SHEET AND PRODUCT INFORMATION FOR CRYSTALLINE SILICON WAFERS FOR SOLAR CELL MANUFACTURING |
| UNE-EN 50513:2011 | Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing |
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