IEC PAS 62276:2001
Superseded
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Single crystal wafers applied for surface acoustic wave device - Specification and measuring method
Hardcopy , PDF
English
08-30-2001
05-30-2005
Introduction
Section 1: Specification for single crystal wafer
1 Scope
2 Reference documents
3 Terms and definitions
4 Symbols and abbreviated terms
5 Requirements
6 Sampling
7 Test methods
8 Identification, labeling, packaging, delivery condition
Section 2: Measuring method
1 Measuring method of Curie Temperature
2 Measurement of lattice constant (Bond method)
3 Measurement of face angle by X-ray
4 Appearance inspections
Annex A (Normative) Expression using Eulerian angle for
piezoelectric Single crystal
Annex B (Informative) Crystal growth method
Annex C (Informative) Manufacturing lot
Annex D (Informative) Explanation of TTV, LTV and Sori
Annex E (Informative) Standard mechanical wafer process
flow chart
Annex F (Informative) Reference
Applies to single crystal wafers intended for manufacturing substrates made of synthetic quartz crystal, lithium niobate, lithium tantalate, lithium tetraborate crystals for surface acoustic wave (SAW) filters and resonators. Lays down specifications and measuring methods.
| DevelopmentNote |
Also numbered as BS PD IEC/PAS 62276. (02/2002)
|
| DocumentType |
Miscellaneous Product
|
| Pages |
33
|
| PublisherName |
International Electrotechnical Committee
|
| Status |
Superseded
|
| SupersededBy |
| Standards | Relationship |
| NEN NPR IEC/PAS 62276 : 2001 | Identical |
A newer version of this standard is available.
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