ISO 17560:2002
Withdrawn
View Superseded by
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon
English, French
07-18-2002
04-09-2025
ISO 17560:2002 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal or amorphous-silicon specimens with boron atomic concentrations between 1×1016 atoms/cm3 and 1×1020 atoms/cm3, and to crater depths of 50 nm or deeper.
| Committee |
ISO/TC 201/SC 6
|
| DocumentType |
Standard
|
| Pages |
10
|
| PublisherName |
International Organization for Standardization
|
| Status |
Withdrawn
|
| SupersededBy |
| Standards | Relationship |
| AS ISO 17560-2006 | Identical |
| BS ISO 17560:2002 | Identical |
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