JIS K 0148:2005
Withdrawn
View Superseded by
Surface chemical analysis -- Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
English
03-20-2005
01-22-2026
This Standard specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. The method is applicable to: elements of atomic number from 16 (S) to 92 (U); contamination elements with atomic surface densities from 1 multiplied by 10 to the 10th power atoms/square centimeters to 1 multiplied by 10 to the 14th power atoms/square centimeters; contamination elements with atomic surface densities from 5 multiplied by 10 to the 8th power atoms/square centimeters to 5 multiplied by 10 to the 12th power atoms/square centimeters using a VPD (vapour-phase decomposition) specimen preparation method.
| DocumentType |
Standard
|
| Pages |
26
|
| PublisherName |
Japanese Standards Association
|
| Status |
Withdrawn
|
| SupersededBy |
| Standards | Relationship |
| ISO 14706:2000 | Identical |
Reaffirmed 2014 2005(R2014) [20/10/2014]2005(R2009) [01/10/2009]2005 [20/03/2005]
| JIS B 9920:2002 | Classification of air cleanliness for cleanrooms |
| JIS Z 8402-2:1999 | Accuracy (trueness and precision) of measurement methods and results -- Part 2: Basic method for the determination of repeatability and reproducibility of a standard measurement method |
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