MIL-PRF-19500-260 Revision M:2014
Superseded
View Superseded by
Semiconductor Device, Diode, Silicon, Power Rectifier, Encapsulated (Case Mount Stud) and Unencapsulated, Types 1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A, and AR Versions, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, and JANKC, Encapsulated (Case Mount Stud), 1N1124A, 1N1126A, 1N1128A, 1N3649, 1N3650, and R Versions, Quality Level JAN Only
English
10-30-2014
04-19-2021
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the performance requirements for silicon semiconductor power rectifier diodes.
| DevelopmentNote |
Supersedes MIL S 19500/260 (D). (02/2000) Supersedes MIL S 19500/104 (C). (08/2004) Inactive for New Design. (03/2007)
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| DocumentType |
Standard
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| Pages |
15
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| PublisherName |
US Military Specs/Standards/Handbooks
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| Status |
Superseded
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| SupersededBy | |
| Supersedes |
This specification covers the performance requirements for silicon semiconductor power rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for encapsulated device types 1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A and two levels of product assurance (JANHC, and JANKC) for each unencapsulated device type as specified in MIL-PRF-19500. One level of product assurance (JAN) is provided for device types 1N1124A, 1N1126A, 1N1128A, 1N3649, and 1N3650 as specified in MIL-PRF-19500.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |