MIL-PRF-19500-304 Revision E:2011
Superseded
View Superseded by
Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Types 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893, 1N3890R, 1N3891R, 1N3893R, and A-Versions, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
09-20-2011
04-23-2021
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for 12 and 20 ampere, silicon fast recovery, power, rectifier diodes.
| DevelopmentNote |
Supersedes MIL S 19500/304 (C). (02/2000) E NOTICE 1 - Notice of Validation. (07/2016)
|
| DocumentType |
Standard
|
| Pages |
18
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy | |
| Supersedes |
This specification covers the performance requirements for 12 and 20 ampere, silicon, fast recovery, power rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance (JANHC and JANKC) for each unencapsulated device type.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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