MIL-PRF-19500-359 Revision K:2010
Superseded
View Superseded by
Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Types 1N4942, 1N4944, 1N4946, 1N4947, and1N4948, Quality Levels JAN, JANTX, andJANTXV
10-02-2010
04-23-2021
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for a silicon, fast recovery semiconductor power rectifier diode for use in equipment circuits.
| DevelopmentNote |
Inactive for New Design. Supersedes MIL S 19500/359 (D). (09/2001) K NOTICE 1 - Notice of Validation but remains Inactive for New Design. (11/2015)
|
| DocumentType |
Standard
|
| Pages |
20
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy | |
| Supersedes |
This specification covers the performance requirements for a silicon, fast recovery semiconductor power rectifier diode for use in equipment circuits. Three levels of product assurance (JAN, JANTX, and JANTXV) are provided for each device as specified in MIL-PRF-19500.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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