MIL-PRF-19500-429 Revision N:2014
Superseded
Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Encapsulated (Through-Hole and Surface Mount Packages), and Un-Encapsulated, Types 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
English
05-15-2014
05-15-2021
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for silicon, fast recovery power rectifier diodes that are hermetic glass encapsulated.
| DevelopmentNote |
Supersedes MIL S 19500/429 (E). (02/2000)
|
| DocumentType |
Standard
|
| Pages |
25
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| Supersedes |
This specification covers the performance requirements for silicon, fast recovery power rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance (JANHC and JANKC) are provided each unencapsulated device type.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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