MIL-PRF-19500-434 Revision F:2017
Superseded
View Superseded by
Semiconductor Device, Diode, Silicon, Unipolar Transient Voltage Suppressor, Type 1N5610 Through 1N5613, Through-Hole and Surface Mount Packages, Quality Levels JAN, JANTX, JANTXV, and JANS
08-15-2017
05-11-2021
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for 1,500 watt, peak, pulse power, silicon, transient, voltage suppressor diodes.
| DevelopmentNote |
Supersedes MIL S 19500/434. (02/2000)
|
| DocumentType |
Standard
|
| Pages |
30
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy | |
| Supersedes |
This specification covers the performance requirements for 1,500 watt, peak, pulse power, silicon, transient, voltage suppressor diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device as specified in MIL-PRF-19500.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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