MIL-PRF-19500-516 Revision G:2016
Superseded
View Superseded by
Semiconductor Device, Diode, Silicon, Bipolar Transient Voltage Suppressor, Encapsulated (Through-Hole and Surface Mount Packages) and Un-Encapsulated Types 1N6102 Through 1N6173, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
English
03-22-2016
05-11-2021
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for bipolar 500 watt and 1,500 watt peak pulse power transient voltage suppressor diodes.
| DevelopmentNote |
Supersedes MIL S 19500/516 (C). (02/2000)
|
| DocumentType |
Standard
|
| Pages |
27
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy | |
| Supersedes |
This specification covers the performance requirements for bipolar 500 watt and 1,500 watt peak pulse power transient voltage suppressor diodes with voltage tolerances of either 10 or 5 percent. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device (die).
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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