MIL-PRF-19500-562 Revision E:2010
Superseded
Transistor, Field Effect, P-Channel, Silicon, Encapsulated (Through-Hole Mount Packages) and Un-Encapsulated (Die), Types 2N6804 and 2N6806 JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
08-26-2010
04-30-2021
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications.
| DevelopmentNote |
Supersedes MIL S 19500/562. (02/2000)
|
| DocumentType |
Standard
|
| Pages |
45
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| Supersedes |
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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