MIL-PRF-19500-589 Revision A:1998
Withdrawn
SEMICONDUCTOR DEVICE, TRANSISTOR, INSULATED GATE, BIPOLAR N-CHANNEL, SILICON TYPES 2N7367 AND 2N7368, JAN, JANTX, JANTXV, AND JANS (NO S/S DOCUMENT)
04-15-1998
05-23-2002
Gives performance requirements for insulated gate bipolar power transistors. Four levels of product assurance are given for each type of device defined in MIL-PRF-19500.
| DevelopmentNote |
Supersedes MIL S 19500/589 (02/2000) A Notice 1 - Notice of Cancellation without replacement. (06/2002)
|
| DocumentType |
Standard
|
| Pages |
17
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Withdrawn
|
| Supersedes |
This specification covers the performance requirements for an insulated gate bipolar power transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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