MIL-PRF-19500-594 Revision C:2016
Superseded
View Superseded by
Semiconductor Device, Diode, Silicon, Power Rectifier, Ultra Fast Recovery, Low Leakage, Types 1N6664 Through 1N6666, and 1N6664R Through 1N6666R, Quality Levels JAN, JANTX, JANTXV, and JANS
English
09-22-2016
04-29-2021
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the performance requirements for a silicon, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
| DevelopmentNote |
Supersedes MIL S 19500/594. (02/2000)
|
| DocumentType |
Standard
|
| Pages |
13
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy | |
| Supersedes |
This specification covers the performance requirements for a silicon, fast recovery power rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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