MIL-PRF-19500-595 Revision K:2013
Superseded
View Superseded by
Transistor, Repetitive Avalanche, Field Effect, P-Channel, Silicon, Types 2N7236, and2N7237, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
English
11-20-2013
04-24-2021
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications.
| DevelopmentNote |
Supersedes MIL S 19500/595 (B) (02/2000)
|
| DocumentType |
Standard
|
| Pages |
22
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy | |
| Supersedes |
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device, and two levels of product assurance (JANHC and JANKC) for each unencapsulated device, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR).
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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