MIL-PRF-19500-602 Revision B:1997
Withdrawn
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7265, 2N7266, AND 2N7267 JANTXVM, D, R, F, G, AND H AND JANSM, D, R, F, G, AND H (NO S/S DOCUMENT)
06-03-1997
10-15-2002
| DevelopmentNote |
Supersedes MIL S 19500/602 (02/2000) B Notice 1 - Notice of Cancellation without Replacement (03/2004)
|
| DocumentType |
Standard
|
| Pages |
23
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Withdrawn
|
| Supersedes |
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, Radiation Hardened (total dose only), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500, with Avalanche Energy Maximum rating (EAS) and Maximum Avalanche Current (IAS).
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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