MIL-PRF-19500-603 Revision L:2016
Superseded
View Superseded by
Transistor, Field Effect Radiation Hardened (Total Dose Only), N-Channel, Silicon, (Through-Hole, Surface Mount, And Carrier Board Packages), Types 2N7268, 2N7269, 2N7270, 2N7394, Jantxvr, F, G, H; Jansr, F, G, And H
English
09-09-2016
04-23-2021
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power.
| DevelopmentNote |
Supersedes MIL S 19500/603 (A). (02/2000)
|
| DocumentType |
Standard
|
| Pages |
35
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy | |
| Supersedes |
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to four radiation levels (“R”, “F”, “G”, and “H”) are provided for JANTXV and JANS product assurance levels. See 6.7 for JANHC and JANKC die versions.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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