MIL-PRF-19500-605 Revision E:2016
Withdrawn
Transistor, Field Effect, Radiation Hardened (Total Dose Only) N-Channel, Silicon, Types 2N7292, 2N7294, 2N7296, and 2N7298, JANTXVM, D, R, Hand JANSM, D, R and H (No S/S Document)
English
08-12-2016
08-12-2016
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power switching applications.
| DevelopmentNote |
Supersedes MIL S 19500/605 (02/2000)
|
| DocumentType |
Standard
|
| Pages |
24
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Withdrawn
|
| Supersedes |
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
Please Login or Create an Account so you can add users to your Multi user PDF Later.
Important note : All end users must be registered with an Account prior to user licenses being assigned.
Users cannot be edited or removed once added to your Multi user PDF.