MIL-PRF-19500-632 Revision C:2014
Withdrawn
View Superseded by
Transistor, Field Effect, N-Channel Silicon, Radiation Hardened (Total Dose and Single Even Effects), Types 2N7399, 2N7400, 2N7401, and 2N7402, Flange Mount Package, Quality Levels JANSD and JANSR (No S/S Document)
English
05-02-2014
08-28-2025
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event characterization), power transistor.
| DocumentType |
Standard
|
| Pages |
25
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Withdrawn
|
| SupersededBy |
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event characterization only), power transistor. One level of product assurance (JANS)is provided for each device type as specified in MIL-PRF-19500.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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