MIL-PRF-19500-635 Revision A:2000
Withdrawn
Semiconductor Device, Diode, Silicon, Power Rectifier, Ultrafast, Types 1N6710 through 1N6716 and 1N6710R through 1N6716R JANTX, JANTXV, and JANS and Power Rectifier, Standard Recovery, Types 1N6710B through 1N6716B and 1N6710BR through 1N6716BR, JANTX, JANTXV and JANS (No S/S Document)
06-16-2000
10-14-2005
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the requirements for silicon, ultrafast power rectifier diodes (1N6710, R through 1N6716, R) and standard recovery diodes (1N6710B, BR through 1N6716B, BR).
| DevelopmentNote |
A NOTICE 1 - Notice of Cancellation without replacement. (10/2005)
|
| DocumentType |
Standard
|
| Pages |
18
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Withdrawn
|
This specification covers the performance requirements for silicon, ultrafast power rectifier diodes (1N6710, R through 1N6716, R) and standard recovery diodes (1N6710B,BR through 1N6716B, BR). Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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