MIL-PRF-19500-642 Revision D:2007
Superseded
View Superseded by
Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Case Mount Through Hole Package, Standard and Reverse Polarity, Types 1N6762 Through 1N6765, Quality LevelsJAN, JANTX, JANTXV, and JANS
08-24-2007
05-17-2021
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration.
| DevelopmentNote |
D NOTICE 1 - Notice of Validation. (06/2012) D NOTICE 2 - Notice of Validation. (05/2017)
|
| DocumentType |
Standard
|
| Pages |
11
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy |
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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