MIL-PRF-19500-666 Base Document:1999
Withdrawn
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, P-Channel Silicon Type 2N7454U1, 2N7455U1 JANSD, R (NO S/S DOCUMENT)
08-03-1999
12-09-2004
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event characterization), power transistor.
| DevelopmentNote |
NOTICE 1 - Notice of Cancellation without replacement. (12/2004)
|
| DocumentType |
Standard
|
| Pages |
22
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Withdrawn
|
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardended (Total Dose and Single Event Effects) Transistor, P-Channel Silicon Type 2N7454U1, 2N7455U1 JANSD, R
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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