MIL-PRF-19500-668 Base Document:1999
Withdrawn
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7462U1 JANSD, -R (NO S/S DOCUMENT)
10-15-1999
06-22-2005
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power switching applications.
| DevelopmentNote |
Supersedes MIL S 19500/668 (10/2002) NOTICE 1 - Notice of Cancellation without replacement. (06/2005)
|
| DocumentType |
Standard
|
| Pages |
17
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Withdrawn
|
| Supersedes |
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power switching applications. One level of product assurance is provided for each device type as specified ni MIL-PRF-19500.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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