MIL-PRF-19500-676 Revision F:2014
Superseded
View Superseded by
Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Types 2N7465 and 2N7466, JANTXVR and JANSR
English
05-09-2014
05-11-2021
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor.
| DocumentType |
Standard
|
| Pages |
25
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy |
This specification covers the performance requirements for an N-channel, enhancement-mode,
MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to one radiation level “R” is provided for JANS and JANTXV product assurance levels.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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