MIL-PRF-19500-704 Revision F:2014
Superseded
View Superseded by
Transistor,Field Effect Radiation Hardened N-Channel, Silicon, Types 2N7485U3, 2N7486U3, 2N7487U3, and 2N7555U3 JANTXVR and JANSR
English
09-12-2014
04-21-2021
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor.
| DocumentType |
Standard
|
| Pages |
24
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy |
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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