MIL-PRF-19500-713 Revision D:2015
Superseded
View Superseded by
Transistor, Field Effect, Radiation Hardened, P-Channel, Silicon, Device Types 2N7549,and 2N7550, JANTXVR, Fand JANSR, F
04-03-2015
01-17-2022
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor.
| DocumentType |
Standard
|
| Pages |
69
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy |
This specification covers the performance requirements for a P-channel, enhancement-mode,
MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications. Provisions for radiation hardness assurance (RHA) to three radiation levels (\"R\", “F”, and “H”) are provided for JANTXV and JANS product assurance levels. See 6.7 for JANHC and JANKC die versions.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
Please Login or Create an Account so you can add users to your Multi user PDF Later.
Important note : All end users must be registered with an Account prior to user licenses being assigned.
Users cannot be edited or removed once added to your Multi user PDF.