MIL-PRF-19500-731 Revision B:2015
Superseded
View Superseded by
Semiconductor Devices, Diode, Silicon, Schottky, Dual Die Types 1N7058CCU3, 1N7058CCU3C, and Single Die Type 1N7038U3, Quality Levels JAN, JANTX, JANTXV, and JANS
English
05-22-2015
08-11-2020
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the performance requirements for silicon, Schottky dual and single power rectifier diodes for use in high frequency switching power supplies and resonant power converters.
| DocumentType |
Standard
|
| Pages |
17
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy |
This specification covers the performance requirements for silicon, Schottky, dual and single die, power rectifier diodes for use in high frequency switching power supplies and resonant power converters. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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