MIL-PRF-19500-735 Revision B:2015
Superseded
View Superseded by
Semiconductor Devices, Diode, Silicon, Schottky, Dual Diode, Common Cathode, Type1N7041 andSingle DiodeType 1N7045, Quality LevelsJAN, JANTX, JANTXV,and JANS
English
07-30-2015
09-25-2020
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the performance requirements for silicon, schottky, power rectifier diodes for use in high frequency switching applications.
| DocumentType |
Standard
|
| Pages |
18
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy |
This specification covers the performance requirements for silicon, Schottky, power rectifier diodes in both a dual diode common cathode and single diode configurations for use in high frequency switching applications. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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