MIL-PRF-19500-742 Revision B:2014
Superseded
View Superseded by
Semiconductor Device, Diode, Silicon, Power Rectifier, Ultrafast Recovery, Types 1N5802CB, 1N5804CB, 1N5806CB, 1N5807CB, 1N5809CBand 1N5811CB, Axial Leadedand Surface Mount Package, Quality Levels JAN, JANTX, and JANTXV
English
07-16-2014
04-27-2021
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for silicon, fast recovery, power rectifier diodes.
| DevelopmentNote |
Inactive for New Design. (07/2014)
|
| DocumentType |
Standard
|
| Pages |
30
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy |
This specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Three levels of product assurance (JAN, JANTX, and JANTXV) are provided for each encapsulated device type as specified in MIL-PRF-19500.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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