MIL-PRF-19500-745 Revision D:2012
Superseded
View Superseded by
Transistor, Field Effect Transistor, P-Channel, Radiation Hardened, Logic-Level Silicon, Types 2N7626, JANTXVand JANS
08-27-2012
06-26-2020
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for a P-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET, transistor.
| DevelopmentNote |
D NOTICE 1 - Notice of Validation. (07/2017)
|
| DocumentType |
Standard
|
| Pages |
20
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy |
This specification covers the performance requirements for a P-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE), low-threshold logic level, MOSFET, transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to two radiation levels (\"R\" and \"F\") are provided for JANTXV and JANS product assurance levels. See 6.7 for JANHC and JANKC die versions.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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