MIL-PRF-19500-749 Revision C Amendment 1 (amendment incorporated):2019
Current
Transistor, Field Effect, P-Channel, Silicon, Radiation Hardened, Types 2N7506U8 and 2N7506U8C, JANTXVR, JANTXVF, JANSR and JANSF
English
11-13-2019
This specification covers the performance requirements for P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor.
| DocumentType |
Standard
|
| Pages |
21
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| Supersedes |
This specification covers the performance requirements for P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications. See 6.7 for unencapsulated JANHC and JANKC die versions.
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