MIL-PRF-19500-752 Revision A:2017
Superseded
View Superseded by
Transistor, Field Effect Radiation Hardened, N-Channel, Logic-Level Silicon, Encapsulated, Type 2N7608T2, JANTXV, and JAN
English
12-13-2017
05-14-2021
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET, transistor.
| DocumentType |
Standard
|
| Pages |
18
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy |
This specification covers the performance requirements for a N-channel, enhancement-mode,
MOSFET, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET, transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to two radiation levels (“R” and “F”) are provided for JANTXV and JANS product assurance levels.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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