MIL-PRF-19500-755 Revision A:2017
Superseded
Transistor, Field Effect, N-Channel, Radiation Hardened,Silicon, Encapsulated (Through Hole Package), Types 2N7588, 2N7590, 2N7592, and2N7594, JANTXVR and F and JANSR, F, and G
09-14-2017
06-24-2020
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor.
| DocumentType |
Standard
|
| Pages |
46
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to three radiation levels (\"R\", \"F\", and “G”) are provided for JANTXV and JANS product assurance levels.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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