MIL-PRF-19500-762 Revision A:2015
Superseded
View Superseded by
Semiconductor Device, Diode, Silicon, Dual Schottky, Common Cathode, Type 1N7062CCT1, JAN, JANTX, JANTXV, and JANS
English
10-28-2015
04-30-2021
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for a silicon, dual Schottky, center-tap power rectifier diode for use in high frequency switching power supplies and resonant power converters.
| DocumentType |
Standard
|
| Pages |
15
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy |
This specification covers the performance requirements for a silicon, dual Schottky, center-tap power rectifier diode for use in high frequency switching power supplies and resonant power converters. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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