MIL-PRF-19500-764 Revision A:2015
Superseded
View Superseded by
Semiconductor Device, Diode, Silicon, Schottky, Dual, Common Cathode, Encapsulated (Through-Hole), Type 1N7071, Quality Levels JAN, JANTX, JANTXV, and JANS
English
11-24-2015
12-11-2020
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the performance requirements for silicon, Schottky center tap power rectifier diodes for use in high frequency switching power supplies and resonant power converters.
| DocumentType |
Standard
|
| Pages |
15
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
|
| SupersededBy |
This specification covers the performance requirements for silicon, Schottky, power rectifier diodes in a dual diode common cathode configuration for use in high frequency switching power supplies and resonant power converters. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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